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US 5,347,149 AGranted
Integrated circuit and method
AssigneeTexas Instruments Incorporated
InventorBurhan Bayraktaroglu
Life of this patent
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Abstract
Integrated circuits and fabrication methods incorporating both two-terminal devices such as IMPATT diodes (446) and Schottky diodes (454) and three-terminal devices such as n-channel MESFETs (480) in a monolithic integrated circuit.
Claims13
An integrated circuit including both two-terminal and three terminal devices, comprising:
- (a) a first layer of semi-insulating semiconductor material including doped contact regions;
- (b) a second layer of doped semiconductor material on said first, layer, said second layer including a plurality of electrically isolated regions, a first of said isolated regions forming an IMPATT diode avalanche drift region and located on one of said contact regions, and a second of said isolated regions forming a FET channel region and located straddling two of said contact regions;
- (c) a top IMPATT region on said first disconnected region;
- and
- (d) a gate over said FET channel region.
2 more elements
An integrated transmit/receive circuit, comprising:
- (a) a power oscillator including a first diode, said power oscillator coupled to a first output;
- (b) a first input;
- (c) a variable oscillator including a second diode, said variable oscillator coupled to said first input;
- (d) a mixer including a third diode, said mixer coupled to said variable oscillator and said first input;
- and
- (e) an amplifier coupled to said mixer and to a second output;
- (f) wherein said diodes are formed in corresponding disconnected regions of a semiconductor layer, said layer on a semi-insulating substrate.
4 more elements
Dependencies are inferred from the claim text.