Semi-insulating compound semiconductor device
AssigneeSony Corporation
InventorKuninobu Tanaka
Life of this patent
Estimating the term…
Abstract
A semi-insulating compound semiconductor device includes an input terminal portion having a protection diode connected thereto and an element formation region and which is provided with a conduction region having the highest potential in the semiconductor device disposed between the input terminal portion and the element formation region. With such an arrangement, low-frequency oscillation of the drain current I.sub.D or drain conductance g.sub.m due to a leak age current from the protection diode connected to the input terminal portion can be prevented from occurring and thus the semi-insulating compound semiconductor device can operate satisfactorily with stabilized characteristics.
Claims10
A semi-insulating compound semiconductor device, comprising:
- an element formation region containing an element;
- an input terminal portion for said element on a surface of a part of said element formation region, said input terminal portion having a protection diode connected thereto;
- a conduction region at least partially surrounding the input terminal portion and protection diode and positioned between said input terminal portion and said element, said conduction region extending downwardly from said surface of said element formation region and terminating at a depth which allows an input path between said input terminal portion and a remainder of said element formation region containing said element;
- and
- said conduction region being connected to a potential which is sufficient to prevent low-frequency oscillation of said element.
A semi-insulating compound semiconductor device, comprising:
- an element formation region containing a semiconductor device element;
- an input terminal for said semiconductor device element on a surface of a part of said element formation region, said input terminal having a protection diode connected thereto;
- a conduction region at least partially surrounding the input terminal and protection diode and positioned between said input terminal and said semiconductor device element, said conduction region extending downwardly from said surface of said element formation region and terminating at a depth which allows an input path between said input terminal and a remainder of said element formation region, said input terminal being an input for said semiconductor device element in said element formation region;
- and
- said conduction region being connected to a potential which is sufficient to prevent low-frequency oscillation of said semiconductor device element.
Dependencies are inferred from the claim text.