US 5,346,848 AGranted

Method of bonding silicon and III-V semiconductor materials

AssigneeMotorola, Inc.

InventorsMelissa E. Grupen-Shemansky, Bertrand F. Cambou

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Abstract

A silicon wafer and a III-V semiconductor wafer are bonded together through a bonding interlayer which is deposited on the III-V semiconductor wafer. By forming the bonding interlayer on the III-V semiconductor wafer, rather than the silicon wafer, the bonding process is facilitated, creating a sufficiently strong bond to carry out further processing. The III-V semiconductor wafer is thinned to relieve stress after the bonding procedure. The bonded wafers may be subjected to a second bonding procedure to increase the bond strength. The bonded wafers can then be subjected to high temperature processing used in semiconductor device fabrication.

Claims9

Dependent claims

A method of bonding a silicon wafer and a III-V semiconductor wafer, comprising the steps of:

providing a silicon wafer having a first and a second major surface;
providing a III-V semiconductor wafer having a first and a second major surface;
forming a bonding interlayer on the first major surface of the III-V semiconductor wafer;
bonding the silicon wafer and the III-V semiconductor wafer together by using a first thermal or a thermo-anodic bonding process, such that the bonding interlayer is positioned between the III-V semiconductor wafer and the first major surface of the silicon wafer;
removing a portion of the III-V semiconductor wafer from the second major surface of the III-V semiconductor wafer;
and subjecting the III-V semiconductor wafer and the silicon wafer to a second thermal or thermo-anodic bonding process at a temperature less than approximately 200.degree. C. after the step of removing a portion of the III-V semiconductor wafer.

3 more elements

Dependencies are inferred from the claim text.