Method of manufacturing a semiconductor device having a memory cell and peripheral circuit including forming a first electrode for the capacitor

A method of manufacturing a semiconductor memory having a memory cell region and a peripheral circuit region, and a memory cell being constituted by a transistor and a capacitor, comprising the steps of:

• forming a conductive film which comprises a first electrode for a plate electrode of said capacitor;
• forming a first resist on the surface of said peripheral circuit and memory cell regions;
• patterning said conductive film using said first resist as a mask to form said first electrode;
• forming a first insulating film on said conductive film so as to planarize said conductive film;
• forming a second resist on the surface of at least said memory cell region;
• removing said first insulating film from said peripheral circuit region by wet etching using said second resist as a mask;
• removing said second resist;
• and
• removing said conductive film from said peripheral circuit region using said first insulating film as a mask.