Use of a faceted etch process to eliminate stringers
AssigneeMicron Semiconductor, Inc.
InventorsTrung T. Doan, Guy T. Blalock
Life of this patent
Estimating the term…
Abstract
A process to create a faceted (prograde) profile for an integrated circuit, in which the top corners of a layer disposed over a feature are preferentially etched, thereby creating slopes. The profile which results from the deposit of subsequent layers is more easily etched as a result of the contour imparted by the faceted edges. Since the subsequent layers are placed in the "line of sight" of the etch plasma, there are significantly fewer "stringers."
Claims17
A method to minimize residual deposits during etch, said method comprising the following steps of:
- creating a first layer having a prograde profile, said prograde profile of said first layer being formed by removing a portion of said first layer and depositing said portion at another site on said first layer;
- disposing another layer superjacent said first layer;
- and
- patterning and selectively removing said another layer, whereby said removal of said another layer is unobstructed by said profile of said first layer.
A process for minimizing residue when etching layers, said process comprising the following steps of:
- disposing a first layer over at least one feature, said feature having sidewalls, said first layer having a profile;
- altering said profile of said first layer, wherein said profile of said first layered is altered by removing a portion of said first layer and redepositing said portion at another site on said first layer, said altered profile being prograde;
- disposing a second layer superjacent said first layer;
- removing a section of said second layer at least along one of side sidewalls.
A method for etching relatively closely spaced features, said method comprising the following steps of:
- disposing a substrate in a reactor, said substrate having closely spaced features disposed thereon, said features being covered by a first material;
- and
- creating an atmosphere in said reactor, said atmosphere comprising ions, said ions preferentially removing said first material, thereby creating facets in said first material;
- disposing a second material superjacent said first material;
- and
- substantially removing a portion of said second material located between said features.
Dependencies are inferred from the claim text.