Method for producing semiconductor device using a vacuum sealing mechanism having inner and outer bellows

A method for producing a semiconductor device using an apparatus comprising:

• a carrier chamber;
• a reaction chamber;
• a spare chamber having an opening and capable of being vacuum sealed;
• a supporting member having a stage for supporting a semiconductor substrate;
• a vertically reciprocating part surrounding said supporting member which vertically reciprocates in the opening o said spare chamber;
• and
• a sealing mechanism fixed to said vertically reciprocating part and including a flange having opposed first and second surfaces and an air inlet, an inner bellows and an outer bellows attached to the first surface of said flange and to said spare chamber and forming a ring-shaped space between them, opening into the ring-shaped space, and a second bellows attached to the second surface of said flange and said spare chamber;
• said production method comprising:
• evacuating said spare chamber and said carrier chamber and carrying a semiconductor substrate from said spare chamber to said carrier chamber;
• evacuating said carrier chamber and said reaction chamber to a low vacuum and carrying said semiconductor substrate from said carrier chamber to said reaction chamber;
• treating said semiconductor substrate in said reaction chamber;
• evacuating said reaction chamber and said carrier chamber and carrying said semiconductor substrate from said reaction chamber to said carrier chamber;
• and
• bringing said carrier chamber and said spare chamber to atmospheric pressure and carrying said semiconductor substrate from said carrier chamber to said spare chamber.

A method for producing a semiconductor device using an apparatus comprising:

• a carrier chamber;
• a spare chamber;
• a reaction chamber having an opening and capable of being vacuum sealed;
• a supporting member having a stage for supporting a semiconductor substrate, heating means, and rotation means;
• a reaction gas inlet through which reaction gas for treating a substrate is introduced into said reaction chamber;
• a vertically reciprocating part surrounding said supporting member which vertically reciprocates in the opening of said reaction chamber;
• and
• a sealing mechanism fixed to said vertically reciprocating part and including a flange having opposed first and second surfaces and an air inlet, an inner bellows and an outer bellows attached to the first surface of said flange and to said spare chamber and forming a ring-shaped space between them, opening into the ring-shaped space, and a second bellows attached to the second surface of said flange and said spare chamber;
• said production method comprising:
• evacuating said spare chamber and said carrier chamber and carrying a semiconductor substrate from said spare chamber to said carrier chamber;
• evacuating said carrier chamber and said reaction chamber to a low vacuum and carrying said semiconductor substrate from sad carrier chamber to said reaction chamber;
• treating said semiconductor substrate in said reaction chamber;
• evacuating said reaction chamber and said carrier chamber and carrying said semiconductor substrate from said reaction chamber to said carrier chamber;
• and
• bringing said carrier chamber and said spare chamber to atmospheric pressure and carrying said semiconductor substrate from said carrier chamber to said spare chamber.