Back to results
US 5,345,102 AGranted
Bipolar transistor having collector electrode penetrating emitter and base regions
AssigneeNEC Corporation
InventorNaoya Matsumoto
Life of this patent
Estimating the term…
Abstract
A bipolar transistor with a trench. The trench extends down into a buried collector region through an emitter region, the underlying intrinsic base and collector regions at their center portion. Insulating films are formed on the sidewalls of the trench. The trench is filled with a collector-connection conductor which contacts with the buried collector region.
Claims12
A bipolar transistor comprising:
- a semiconductor substrate;
- a buried collector region formed in said semiconductor substrate;
- a collector region formed on said buried collector region;
- an intrinsic base region formed on said collector region;
- a graft base region formed to surround said intrinsic base region and having an impurity concentration higher than said intrinsic base region;
- an emitter region formed in said intrinsic base region;
- a trench formed to penetrate into said emitter region and to reach said buried collector region through said intrinsic base region and said collector region;
- and
- a collector electrode filling said trench with an electrical isolation from said intrinsic base region and said emitter region, said collector electrode being in contact with said buried collector region.
6 more elements
Dependencies are inferred from the claim text.