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US 5,345,097 AGranted
Heterojunction bipolar transistor including collector region of InP and method of fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorAtsushi Nakagawa
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Abstract
A heterojunction bipolar transistor includes a collector region made of first-conduction-type InP. and a base region connected to the collector region and made of second-conduction-type In.sub.x (Ga.sub.y Al.sub.1-y).sub.1-x As where the letters "x" and "y" denote predetermined atomic fractions. The atomic fraction "x" is in the range of 0.52 to 0.53. The atomic fraction "y" is in the range of 0.35 to 0.72.
Claims5
A heterojunction bipolar transistor comprising:
- a collector region made of first-conduction-type InP;
- and
- a base region connected to the collector region and made of second-conduction-type In.sub.x (Ga.sub.y Al.sub.1-y).sub.1-x As where the letters "x" and "y" denote predetermined atomic fractions, wherein the atomic fraction "x" is in the range of 0.52 to 0.53 and the atomic fraction "y" is in the range of 0.35 to 0.72,
- further including a semi-insulating substrate of InP, a subcollector region of first conduction type In.sub.x Ga.sub.1-x As on said substrate, and wherein said collector region is situated on said subcollector region.
1 more element
A method of fabricating a heterojunction bipolar transistor, comprising the steps of:
- forming a collector region from first-conduction-type InP;
- and
- forming a base region from second-conduction-type In.sub.x (Ga.sub.y Al.sub.1-y).sub.1-x As where the letters "x" and "y" denote predetermined atomic fractions, wherein the atomic fraction "x" is in the range of 0.52 to 0.53 and the atomic fraction "y" is in the range of 0.35 to 0.72, the base region being connected to the collector region,
- wherein said step of forming a collector region further comprises the steps of:
- forming a semi-insulating substrate of InP,
- forming a subcollector region of first conduction type In.sub.x Ga.sub.1-x As on said substrate, and
- forming said collector region on said subcollector region.
4 more elements
Dependencies are inferred from the claim text.