Process for etching semiconductor devices

A process for etching a semiconductor device to form an etched pattern therein, comprising:

• providing in a etching area, a semiconductor device having a plurality of layers, at least one of said layers of said semiconductor device comprising a layer formed of a first material which, when chemically reacted with a chemical etchant in gas phase, at a temperature of up to about 200 degrees C., forms nonvolatile by-products from said chemical reaction, the presence of said nonvolatile gaseous by-products inhibiting the etching of the semiconductor device;
• elevating the temperature of each said layer of said first material to a level which, upon reaction with said chemical etchant, forms volatile gaseous by-products from said chemical reaction;
• anisotropically etching said semiconductor device with said chemical etchant, at said elevated temperature, to form a pattern therein, said etching of said semiconductor device producing said volatile gaseous by-products and said nonvolatile gaseous by-products which does not inhibit the effective etching of said semiconductor device;
• removing said gaseous volatile by-products from said etching area;
• and
• providing a foraminous member for supporting said semiconductor device within said etching work area, said foraminous member being unreactive with said semiconductor device and remaining intact at said elevated temperature.