Method for fabricating thin-film capacitor with restrained leakage current at side and end portions of electrodes in a semiconductor integrated circuit device

A method for fabricating a semiconductor device including a thin-film capacitor formed by successively depositing a dielectric film and an upper electrode on a lower electrode, said lower electrode protruding from a surface of a first interlayer insulating film deposited on a semiconductor substrate, comprising the steps of:

• forming a barrier metal layer on the lower electrode;
• forming said dielectric film on an entire surface of said lower electrode and said first interlayer insulating film, said dielectric film being made of a material having a dielectric constant;
• forming a second interlayer insulating film deposited on a surface of said dielectric film to the extent that a surface of said dielectric film is buried in said second interlayer and that the film thus deposited becomes substantially uniform in height;
• removing said second interlayer insulating film by etching until the surface of said dielectric film is exposed thereby forming a flattened surface;
• and
• forming said upper electrode extending entirely on said flattened surface.

A method for fabricating a semiconductor device including a thin-film capacitor formed by successively depositing a dielectric film and an upper electrode on a lower electrode, said lower electrode protruding from a surface of a first interlayer insulating film deposited on a semiconductor substrate, comprising the steps of:

• forming a barrier metal layer on the lower electrode;
• forming said dielectric film on an entire surface of said lower electrode and said first interlayer insulating film, said dielectric film being made of a material having a dielectric constant;
• forming a second interlayer insulating film deposited on said dielectric film in conformity with a profile of said dielectric film until a surface of said dielectric film is buried in said second interlayer insulating layer;
• removing said second interlayer insulating film by etching-back with said second interlayer insulating film partly remaining at only side portions of said dielectric film;
• and
• forming said upper electrode extending entirely on surfaces of said dielectric film and said second interlayer insulating film partly remaining.

A method for fabricating a semiconductor device including a thin-film capacitor formed by successively depositing a dielectric film and an upper electrode on a lower electrode, said lower electrode protruding from a surface of a first interlayer insulating film deposited on a semiconductor substrate, comprising the steps of:

• forming a barrier metal layer on the lower electrode;
• forming said dielectric film only at a portion corresponding to said lower electrode, said dielectric film being made of a material having a dielectric constant;
• forming a second interlayer insulating film deposited on said dielectric film and said first interlayer insulating film to the extent that a surface of said dielectric film is buried in said second interlayer insulating layer and that the film thus deposited becomes substantially uniform in height;
• removing said second interlayer insulating film by etching until the surface of said dielectric film is exposed thereby forming a flattened surface;
• and
• forming said upper electrode on said flattened surface.

A method for fabricating a semiconductor device including a thin-film capacitor formed by successively depositing a dielectric film and an upper electrode on a lower electrode, said lower electrode protruding from a surface of a first interlayer insulating film deposited on a semiconductor substrate, comprising the steps of:

• forming a barrier metal layer on the lower electrode;
• forming said dielectric film only at a portion corresponding to said lower electrode, said dielectric film being made of a material having a dielectric constant;
• forming a second interlayer insulating film deposited on said dielectric film and said first interlayer insulating film in conformity with a profile of said dielectric film until a surface of said dielectric film is buried in said second interlayer insulating layer;
• removing said second interlayer insulating film by etching-back with a second interlayer insulating film partly remaining at only side portions of said dielectric film;
• and
• forming said upper electrode extending entirely on surfaces of said dielectric film and said second interlayer insulating film partly remaining.