Capacitor and a memory cell formed therefrom

A memory cell comprising:

• a transistor having a first current electrode and a second current electrode separated by a channel region and a gate adjacent the channel region wherein the gate is isolated from the channel region by a gate dielectric;
• a dielectric isolation region overlying the transistor, the dielectric isolation region having an opening that exposes a portion of one of either the first current electrode or the second current electrode to form an exposed electrode portion;
• an annular high-permittivity dielectric region having an inner and an outer sidewall, the annular high-permittivity dielectric region overlying the dielectric isolation region and functioning as a capacitor dielectric, the annular high-permittivity dielectric region having a width measured from the inner sidewall to the outer sidewall wherein the width is greater than 500 Angstroms, the inner sidewall defining an inner perimeter of the annular high-permittivity dielectric region and the outer sidewall defining an outer perimeter of the annular high-permittivity dielectric region;
• a first capacitor electrode formed adjacent the inner sidewall and within the inner perimeter of the annular high-permittivity dielectric region and being electrically coupled to the first current electrode;
• and
• a second capacitor electrode formed adjacent the outer sidewall and outside the outer perimeter of the annular high-permittivity dielectric region.

A capacitor comprising:

• a substrate;
• an annular high-permittivity dielectric region formed overlying the substrate, the annular high-permittivity dielectric region having an inner sidewall and an outer sidewall;
• a first capacitor electrode formed adjacent the inner sidewall of the annular high-permittivity dielectric region;
• and
• a second capacitor electrode formed adjacent the outer sidewall of the annular high-permittivity dielectric region wherein the first and the second capacitor electrodes are formed by selectively removing portions of a single conductive layer.

A capacitor comprising:

• a substrate;
• a plurality of capacitors overlying the substrate, each capacitor comprising:
• an annular high-permittivity dielectric region formed overlying the substrate, the annular high-permittivity dielectric region having an inner sidewall and an outer sidewall;
• a first capacitor electrode formed adjacent the inner sidewall of the annular high-permittivity dielectric region;
• and
• a second capacitor electrode formed adjacent the outer sidewall of the annular high-permittivity dielectric region wherein the first capacitor electrode and the second capacitor electrode are formed by selectively removing a conductive layer;
• and
• a conductive material electrically connecting each second capacitor electrode of all capacitors in the plurality by using the conductive layer.