Method of manufacturing a semiconductor device, in which photoresist on a silicon oxide layer on a semiconductor substrate is stripped using an oxygen plasma afterglow and a biased substrate

In a method of manufacturing a semiconductor device having a layer of silicon oxide provided on a surface of a semiconductor substrate and a photoresist provided over said layer of silicon oxide in a processing chamber, the method of limiting contamination of said layer of silicon oxide by carrying out the steps comprising

• (a) connecting a first electrode to another surface of the semiconductor substrate, said first electrode being connected to a positive terminal of an electrical source,
• (b) arranging a second electrode in the processing chamber at a distance from the photoresist, said second electrode being connected to a negative terminal of said electrical source,
• (c) applying at least a direct current electrical voltage between aid first and second electrodes,
• (d) stripping said photoresist from the layer of silicon oxide by placing said photoresist in an afterglow of an oxygen plasma, and
• (e) maintaining an electric field of said electrical voltage between said layer of silicon oxide and said plasma with said first and second electrodes in order to reduce contamination of said layer of silicon oxide by decelerating ions of said plasma.