Fabrication of electronic devices by electroless plating of copper onto a metal silicide
AssigneeAT&T Bell Laboratories
InventorsLeonard C. Feldman, Gregg S. Higashi, Cecilia Y. Mak, Barry Miller
Life of this patent
Estimating the term…
Abstract
It has been found that selective metallization in integrated circuits is expeditiously achieved through a copper plating procedure. In this process, palladium silicide is used as a catalytic surface and an electroless plating bath is employed to introduce copper plating only in regions where the silicide is present. Use of this procedure yields superior filling of vias and windows with excellent conductivity.
Claims9
A process for fabricating a device comprising the steps of forming a layer on a substrate, forming an opening through said layer to said substrate, forming a region of metal silicide on said substrate in the region positioned at the bottom of said opening and plating copper material onto said silicide using an electroless plating bath.
Dependencies are inferred from the claim text.