Photochemical vapor deposition process
AssigneeKawasaki Steel Corporation
InventorsTomohiro Ohta, Hiroaki Sasaki, Tohru Mitomo, Naoki Kubota
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AssigneeKawasaki Steel Corporation
InventorsTomohiro Ohta, Hiroaki Sasaki, Tohru Mitomo, Naoki Kubota
Estimating the term…
As to technical subject matters of attempting increase of deposition rate and improvement of film quality and removing restriction of light source and source gas in the photo CVD process, the promotion of photolysis of the source gas is achieved by use of a pulse laser beam together with a continuous light, application of plural laser beams wherein each pulse of at least one second pulse laser beam is irradiated into each interval between a pulse and the next pulse in a first lase beam, and further introduction of an additive gas in addition to the source gas into a reaction vessel and particularly the provision of photo CVD process advantageously adaptable for the production of semiconductor is realized.
A photochemical vapor deposition process using a plurality of pulsed laser beams having at least one wavelength, at least one of which wavelength is a wavelength that decomposes a source gas comprising:
A photochemical vapor deposition process using a plurality of pulsed laser beams having at least one wavelength that decompose a source gas comprising:
Dependencies are inferred from the claim text.