Bilayer resist and process for preparing same
AssigneeCornell Research Foundation, Inc.
InventorsChristopher K. Ober, Allen H. Gabor, Eric A. Lehner, Guoping Mao, Lizabeth A. Schneggenburger
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Abstract
A resist pattern on a substrate is formed using an imageable resist layer on the surface of a substrate. The imageable resist layer comprises a silicon-incorporated polystyrene-diene block copolymer having a silicon weight percent of at least about 5 percent. The imageable layer is prepared by reacting a polystyrene-diene block copolymer with a silicon-containing compound in the presence of a platinum catalyst. In a preferred embodiment, the poly(styrene)-diene block copolymers are hydrosilylated by hydrosiloxanes using a platinum-divinyl tetramethyl disiloxane catalyst.
Claims9
A process for forming a resist pattern on a substrate that provides good resolution, dimensional stability and etching protection during processing, the process comprising:
- applying an imageable resist layer to the surface of a substrate, the imageable resist layer comprising a silicon-incorporated polystyrene-diene block copolymer having silicon present in the block copolymer in an amount sufficient to form silicon oxides in the presence of a gas plasma in an amount sufficient to resist etching of the block copolymer upon exposure to the gas plasma;
- forming a mask pattern on at least a portion of the resist layer through which portions of the substrate surface are exposed;
- and
- etching the mask pattern and the exposed portions of the substrate with a gas plasma.
A process for forming a resist pattern on a substrate, comprising:
- applying a first resist layer on the surface of a substrate for planarizing the substrate surface;
- applying a second imageable resist layer on said first resist layer, the second imageable resist layer comprising a silicon-incorporated polystyrenediene block copolymer having a silicon weight percent of at least about 5 percent;
- forming a mask pattern on at least a portion of the second resist layer through which portions of the planarizing layer are exposed;
- and
- reactive ion etching the mask pattern and the exposed portions of the second resist layer.
A process for forming a resist pattern on a substrate that provides good resolution, dimensional stability and etching protection during processing, the process comprising:
- etching with a gas plasma a mask pattern formed on at least a portion of an imageable resist layer applied to the surface of a substrate, the imageable resist layer comprising a silicon-incorporated polystyrene-diene block copolymer having silicon present in the block copolymer in an amount sufficient to form silicon oxides in the presence of a gas plasma in an amount sufficient to resist etching of the block copolymer upon exposure to the gas plasma.
Dependencies are inferred from the claim text.