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US 5,266,529 AGranted
Focused ion beam for thin film resistor trim on aluminum nitride substrates
AssigneeTRW Inc.
InventorsJames C. Lau, Maurice Lowery, Kenneth Lui
Life of this patent
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Abstract
A method for trimming thin film resistors. A focused inert ion beam is employed to selectively remove portions of a resistive film deposited on a substrate.
Claims8
A method of fabricating a thin film resistor with a precise resistance value comprising the steps of:
- forming a thin film of resistive material on an aluminum nitride substrate;
- attaching a pair of conductor pads directly to said thin film, said conductor pads being spaced from one another and from said substrate, said conductor pads being adaptable to electrically couple said resistive material to a circuit;
- and
- selectively removing portions of said thin film of resistive material with a exposing a corresponding area of said substrate.
1 more element
A method of fabricating a thin film resistor with a precise resistance value comprising the steps of:
- forming a thin film of nickel chromium (nichrome) on an aluminum nitride substrate, said substrate having an edge;
- attaching a pair of conductor pads directly to said thin film, said pads being spaced from one another and from said substrate, said pads adapted to electrically couple said nickel chromium to a circuit;
- and
- removing an L-shaped portion of said film of nickel chromium with a focused ion beam to increase the total resistance of said resistor by exposing a corresponding area of said substrate, said L-shaped portion extending from said substrate edge.
1 more element
Dependencies are inferred from the claim text.