Semiconductor element
AssigneeCanon Kabushiki Kaisha
InventorsToshiyuki Komatsu, Yutaka Hirai, Katsumi Nakagawa, Yoshiyuki Osada, Satoshi Omata, Takashi Nakagiri
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Abstract
A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).
Claims10
A semiconductor device which comprises a substrate and a semiconductor layer of a polycrystalline silicon thin film formed on the substrate, said film containing hydrogen atoms in an amount of not more than 3 atomic % and having a surface unevenness of substantially not more than 800 .ANG. at its maximum, and said semiconductor layer of a polycrystalline silicon thin film constituting the main part of the semiconductor device.
A semiconductor device which comprises a semiconductor layer of a polycrystalline silicon thin film containing hydrogen atoms in an amount of not more than 3 atomic % and having an etching rate of 20 .ANG./sec or less by etching with an etchant comprising a mixture of hydrofluoric acid (50 vol. % aqueous solution), nitric acid ( d =1.38, 60 vol. % aqueous solution) and glacial acetic acid at a mixing ratio by volume of 1:3:6, and said semiconductor layer of a polycrystalline silicon thin film constituting the main part of the semiconductor device.
A semiconductor device which comprises a semiconductor layer of a polycrystalline silicon thin film containing hydrogen atoms in an amount of not more than 3 atomic % having a surface unevenness of substantially not more than 800 .ANG. at its maximum and having an etching rate of 20 .ANG./sec. or less by ethhing with an etchant comprising a mixture of hydrofluoric acid (50 vol. % aqueous solution), nitric acid (d =1.38, 60 vol. % aqueous solution) and glacial acetic acid at a mixing ratio by volume of 1 :
- 3 :
- 6 and said semiconductor layer of a polycrystalline silicon thin film constituting the main part of the semiconductor device.
Dependencies are inferred from the claim text.