Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant

A one-step developing solution for positive-working photoresist compositions which comprises:

• (a) an aqueous medium;
• (b) an organic base compound free from metallic ions selected from the group consisting of tetraalkyl ammonium hydroxide and choline in an amount sufficient to obtain a pH of between 11.0 and 13.5;
• and
• (c) 50 to 5000 ppm by weight, based on the amount of the developing solution, of a acetylene alcohol-based surface active agent selected from the group consisting of the compounds represented by the general formula I:
• ##STR6## wherein R.sup.1 is a hydrogen atom or a monovalent group represented by the general formula II ##STR7## R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are each a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and n and m are, each independently from the other, zero or a positive integer not exceeding 20, and the compounds represented by the general formula III ##STR8## wherein R.sup.6 is a hydrogen atom or a monovalent group represented by the general formula--Cr.sup.9 R.sup.10 OH, and R.sup.7, R.sup.8, R.sup.9 and R.sup.10 are each a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.