Process of forming a resist structure on substrate having topographical features using positive photoresist layer and poly(vinyl pyrrolidone) overlayer
AssigneeGeneral Electric Company
InventorsLawrence K. White, Nancy A. Miszkowski
Life of this patent
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Abstract
An improved process for forming multilayer resist structures for lithographic processing of a substrate having topographical features is provided. The structures are comprised of a resist layer having thereover a layer of poly(vinyl pyrrolidone). When the resist layer is a photoresist, the subject structures may optionally contain an absorptive layer directly overlying the substrate and/or a layer of contrast enhancement material overlying the planarizing layer. The poly(vinyl pyrrolidone) optionally contains from about 0.05 to about 0.1 percent by weight of a suitable surfactant, suitably a nonionic surfactant.
Claims9
A process of forming a patterned resist structure on a substrate having topographical features comprising:
- (a) depositing onto the substrate a layer of positive photoresist material;
- (b) depositing over the photoresist layer a layer consisting essentially of poly(vinyl pyrrolidone) to a thickness from over 0.5 up to 1.5 times the height of the tallest topographical feature;
- (c) pattern irradiating the structure with radiation that the positive photoresist material is radiation sensitive to;
- (d) removing the poly(vinyl pyrrolidone) layer;
- and
- (e) developing the photoresist layer by removing radiation exposed areas, whereby a portion of the substrate is exposed.
A process of forming a patterned resist structure on a substrate having topographical features comprising;
- (a) coating the substrate with a layer of material which is absorptive at the light frequency utilized to irradiate said structure;
- (b) coating the absorptive layer with a layer of positive photoresist material;
- (c) coating the photoresist layer with a layer consisting essentially of poly(vinyl pyrrolidone) to a thickness from over 0.5 up to 1.5 times the height of the tallest topographical feature;
- (d) coating the poly(vinyl pyrrolidone) layer with a layer of an opaque contrast enhancement material, that portion of which when irradiated by the light utilized to irradiate the structure becomes substantially transmissive of said light;
- (e) pattern irradiating the structure with light;
- (f) removing the contrast enhancement layer;
- (g) removing the poly(vinyl pyrrolidone) layer;
- (h) developing the photoresist layer by removing radiation exposed areas, whereby a portion of the absorptive layer is exposed;
- and
- (i) removing the exposed portion of the absorptive layer thereby exposing the underlying portion of the substrate.
Dependencies are inferred from the claim text.