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US 4,735,824 AGranted
Method of manufacturing an MOS capacitor
AssigneeKabushiki Kaisha Toshiba
InventorsKikuo Yamabe, Keitaro Imai
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Abstract
A method of forming an MOS capacitor by the steps of cutting a groove in the surface of a silicon substrate by the RIE process, thermally oxidizing the surface of said silicon substrate, depositing a capacitor electrode on said capacitor-insulating layer, being characterized in that when the capacitor-insulating layer is deposited, the surface of the silicon substrate is thermally oxidized in an oxidizing atmosphere containing 15% by vol. of steam.
Claims14
A method of manufacturing an MOS capacitor comprising the steps of:
- forming a groove in the surface of a silicon substrate;
- forming an oxide layer on said surface by thermally oxidizing said surface in an oxidizing atmosphere which contains at least one of the groups consisting of steam, chlorine and fluorine;
- when the atmosphere contains steam, the proportion of said steam ranges between 10 ppm and 30% by vol, and when the atmosphere contains chlorine and/or fluorine, the total proportion of chlorine and/or fluorine ranges between 20 ppm and 10% by vol, whereby a substantially uniform oxide layer is formed on the surface of said groove, including its angular portions;
- and then fabricating a capacitor electrode on the oxide layer.
1 more element
A method of manufacturing an MOS capacitor which comprises the steps of:
- forming a groove in the surface of a silicon substrate;
- forming an oxide layer on said surface by thermally oxidizing said surface in an oxidizing atmosphere which contains at least one of the groups consisting of steam, chlorine and fluorine;
- when the atmosphere contains steam, the proportion of said steam ranges between 10 ppm and 30% by vol, and when the atmosphere contains chlorine and/or fluorine, the total proportion of chlorine and/or fluorine ranges between 20 ppm and 10% by vol, whereby a substantially uniform oxide layer is formed on the surface of said groove, including its angular portions;
- removing said thermally oxidized layer;
- forming a capacitor-insulating layer on the surface of said silicon substrate;
- and
- forming a capacitor electrode on said capacitor-insulating layer.
4 more elements
Dependencies are inferred from the claim text.