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US 4,399,365 AGranted
Ion implant chamber for ion implantation system
AssigneeHitachi, Ltd.
InventorsTakeshi Koike, Atsushi Shibata
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AssigneeHitachi, Ltd.
InventorsTakeshi Koike, Atsushi Shibata
Estimating the term…
An ion implant chamber for an ion implantation system is disclosed in which first and second discs are arranged concentrically and can be simultaneously rotated, the first disc is provided on a circle thereon with a plurality of wafer receiving recesses each having different diameters at both surfaces of the first disc to prevent a wafer from passing through the recess, and ions impinge upon the wafer through the end of the recess having a smaller diameter; in which when wafers have been loaded in the wafer receiving recesses, the second disc is pressed against the first disc and the wafers are held by the first and second discs, since the second disc is movable in the axial direction thereof; and in which the ion implant chamber can be separated into at least two parts, the first one of the parts can move together with the second disc, and the exchange of wafers is made through a gap between the parts thus separated.
An ion implant chamber for an ion implantation system for implanting ion emitted from an ion source into a wafer, comprising:
An ion implant chamber for an ion implantation system for implanting ions emitted from an ion source into a target, comprising:
An ion implant chamber for an ion implantation system for implanting ions into a target, the ion implant chamber comprising:
A wafer supporting apparatus for use in an ion implantation system, the wafer supporting apparatus comprising a chamber base having an opening through which ions pass, a chamber cover capable of being coupled to and decoupled from the chamber base, a chamber cover forming an ion implantation chamber in cooperation with the chamber base upon being coupled thereto, a first rotating disc rotatably arranged within the ion implantation chamber, a second rotating disc arranged on the opposite side of the first rotating disc to the opening of the chamber base within the ion implantation chamber so as to be capable of rotating together with the first rotating disc and being contacted with and spaced apart from the first rotating disc, and means for rotating the first and second rotating discs, the first rotating disc being provided with a plurality of apertures through which the ions pass when the first rotating disc rotates, the first and second rotating disc holding, upon being contacted with each other, a plurality of wafers therebetween so as to implant the ions passed through the apertures into the wafers.
Dependencies are inferred from the claim text.