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AssigneeInternational Rectifier Corporation
InventorHerbert J. Gould
Estimating the term…
A schottky diode and process of manufacture therefor is disclosed wherein a schottky junction is formed between a tungsten schottky barrier metal and a silicon surface which has been treated to produce a single crystal surface by sintering thereto platinum which is encapsulated on its upper and lower surface with palladium layers. After the sintering operation, all traces of silicide are removed by etching and a tungsten or molybdenum schottky barrier layer is applied to the silicide-treated layer. The resultant schottky junction is capable of good operation at extremely high temperatures, for example 200.degree. C. and can be produced with high yield.
The process of manufacture of a Schottky device comprising the steps of depositing, on the surface of a silicon wafer, platinum which is encapsulated on its bottom and top surfaces with palladium, sintering the platinum and palladium into said surface of said silicon wafer, completely removing all traces of said platinum and said palladium and any silicides thereof from said surface such that the exposed surface exhibits a sharp knee reverse voltage characteristic when engaged by a tungsten probe, and depositing a high work function metal on said exposed surface.
The process of manufacture of a Schottky device comprising the steps of depositing a first layer of palladium on the surface of a silicon wafer, depositing a layer of platinum atop said first layer of palladium, depositing a second layer of palladium atop said layer of platinum, thereby to encapsulate said platinum between said first and second layers of palladium, sintering said platinum into said surface of said silicone wafer, completely removing all traces of platinum and palladium metals and any silicides thereof from the surface of said silicon wafer, and depositing a high work function metal on said surface after all silicides have been removed therefrom.
The process of manufacture of a semiconductor device comprising the steps of depositing a first layer of palladium atop a silicon wafer, depositing a layer of platinum atop said first palladium layer, depositing a second layer of palladium atop said platinum;
Dependencies are inferred from the claim text.