Transistor with integrated diode and resistor
AssigneeRCA Corporation
InventorJohn M. S. Neilson
Life of this patent
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Abstract
A semiconductor device including a transistor, diode and resistor comprises a body of semiconductor material formed with conventional emitter, base and collector regions. The collector region forms one electrode of the diode with the other electrode being formed in the region forming the base of the transistor and being separated from the base by an isolation ring. The contact between the emitter and the other electrode are integral, but are insulated from the isolation ring.
Claims4
A semiconductor device including a transistor, a diode and a resistor, said device comprising (a) a body of semiconductor material having first and second surfaces generally parallel to each other, (b) a first region of one conductivity type material extending into said body from said first surface and a second region of opposite conductivity type material extending into said body from said second surface, (c) an emitter region of said opposite type conductivity material extending into said first region from said first surface and forming a first PN junction therewith, said first and second regions forming a second PN junction, and (d) an isolation region of said opposite conductivity type material extending into said first region from said first surface and forming a third PN junction with said first region, whereby said first region is separated into (1) a base portion cooperating with said emitter region and said second region to form a transistor and (2) an electrode portion cooperating with said second region to form a diode, said base portion and said electrode portion being ohmically connected by a portion of the first region disposed between the second PN junction and third PN junction.
Dependencies are inferred from the claim text.