US 4,398,094 A · Equipment and method for annealing semiconductors

Abstract

A semiconductor is annealed by an equipment which comprises a short-arc type rare gas discharge lamp as a heat source possessing the condition, 140.gtoreq.P.times.l.gtoreq.16, where l (mm) is the distance between an anode and a cathode and P is the sealed gas pressure (atmospheric pressure) at room temperature (25.degree. C.), an optical system for converging emitted light from the gas discharge lamp in the required manner, a power source unit capable of controlling the emitted light of the gas discharge lamp, and a stage for mounting the semiconductor. With this equipment, the semiconductor crystal is satisfactorily restored from damages incidental to ion implantation and a polycrystalline or amorphous semiconductor is converted into a good single crystal semiconductor.

Claims2

Dependent claims

A (semiconductor annealing) equipment comprising:

(a) a short-arc type rare gas discharge lamp having an anode, cathode, and a sealed gas pressure with the condition, 140.gtoreq.P.times.l.gtoreq.16, where l (mm) is the distance between the anode and cathode and P is the sealed gas pressure (atmospheric pressure) at room temperature (25.degree. C.);
(b) optical means for converging emitted light from the short-arc type rare gas discharge lamp to irradiate the surface of a semiconductor;
(c) power source means for controlling the intensity of the emitted light of the short-arc type rare gas discharge lamp;
and
(d) a stage for mounting the semiconductor to be irradiated by the lamp.

2 more elements

Dependencies are inferred from the claim text.

Equipment and method for annealing semiconductors

Life of this patent

Equipment and method for annealing semiconductors

Life of this patent

Abstract

Claims2