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US 4,397,938 AGranted
Method of forming resist patterns using X-rays or electron beam
AssigneeRCA Corporation
InventorsNitin V. Desai, Emil J. Gavalchin
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Abstract
In accordance with this invention, there is provided a positive resist medium for microlithography which is comprised of a film of a copolymer of sulfur dioxide and certain vinyl esters. A method of manufacturing microelectronic circuits and recording information utilizing the resist medium of this invention is also provided.
Claims12
A method of forming a patterned layer on a substrate consisting essentially of:
- (a) coating the substrate with a composition comprising a solution of a positive acting resist copolymer having a molecular weight of from about 50,000 to about 200,000 and consisting of repeating units represented by the formula ##STR2## wherein R is an alkyl group and n is an integer, in a suitable solvent;
- (b) drying the coating to form a positive recording medium;
- (c) irradiating a predetermined portion of said medium with an electron beam, a modulated electron beam or x-ray;
- and
- (d) developing the irradiated portion of the medium with a suitable developer.
2 more elements
Dependencies are inferred from the claim text.