Method for stabilizing the current gain of NPN -silicon transistors
AssigneeSiemens Aktiengesellschaft
InventorsManfred Arlt, Joachim Dathe
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Abstract
Stabilizing the current gain of NPN-silicon transistors by two annealing processes: a high temperature annealing process for at least 30 minutes at a temperature of 510.degree. to 590.degree. C., and a lower temperature annealing process for at least 30 minutes at a temperature of 380.degree. to 460.degree. C.
Claims13
Method for stabilizing the current gain of NPN-silicon transistors after high-temperature processes necessary for manufacturing the transistors have been completed, comprising first annealing the transistors for at least 30 minutes at a temperature of 510.degree. to 590.degree. C. and then for at least 30 minutes at a temperature of 380.degree. to 460.degree. C.
Dependencies are inferred from the claim text.