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US 4,396,702 AGranted
Method of forming pattern in positive resist media
AssigneeRCA Corporation
InventorsNitin V. Desai, Eugene S. Poliniak
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Abstract
This invention relates to novel poly(silane sulfone) copolymers having repeating units represented by the formula ##STR1## wherein R is alkyl and n is an integer. Positive resist recording media prepared from the subject copolymers demonstrate excellent sensitivity and resolution and are resistant to oxygen plasma etching.
Claims9
In a method of forming a positive patterned layer on a substrate comprising:
- (a) coating said substrate with a composition comprising a positive acting polymeric resist material and a suitable solvent therefor;
- (b) drying said coating to form a positive recording medium;
- (c) irradiating selected portions of said medium with radiation;
- and
- (d) developing the irradiated portions of said medium with a suitable developer, the improvement comprising utilizing as the resist material a copolymer having repeating units represented by the formula ##STR3## wherein R is lower alkyl and n is an integer.
2 more elements
Dependencies are inferred from the claim text.