Apparatus and method for substrate temperature control
AssigneeChevron Research Company
InventorsRichard E. Rocheleau, Dennis F. Brestovansky, Peter J. Lutz
Life of this patent
Estimating the term…
Abstract
An apparatus and a method for controlling the temperature of a substrate onto which thin films of semiconductor materials are vapor deposited. The apparatus contains a platen contacting a surface of said substrate over the entire length of the deposition zone; said platen having at least one cavity therein and a rounded edge where said substrate first contacts said platen of the beginning of said deposition zone.
Claims18
A method of heating and controlling the temperature of a substrate in a vacuum deposition chamber in the manufacture of thin films of semiconductor material, said method comprising:
- contacting a side of said substrate to a platen over the entire length of a deposition zone, said platen having means for transferring heat with said substrate;
- heating said platen to a temperature;
- measuring the temperature of said platen;
- maintaining the temperature in a cavity in said platen equal to the temperature of said platen so as to control the temperature of said substrate.
An apparatus for heating a substrate in a deposition chamber comprising:
- a platen contacting a surface of said substrate over the entire length of a deposition zone, said platen having at least one cavity therein and a rounded edge where said substrate first contacts said platen at the beginning of said deposition zone;
- means for heating said platen;
- means for sensing the temperature of said platen;
- means for sensing the temperature of said substrate within said cavity;
- means for maintaining the temperature within said cavity equal to the temperature of said platen;
- and
- means for contacting said substrate to said platen.
Dependencies are inferred from the claim text.