Segmented channel field effect transistors
OwnerRajesh H. Parekhinventor
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Abstract
A method for the fabrication of field effect transistors with conduction channels divided into a plurality of segments, each implanted to conduct at various threshold voltages. Field effect transistors, heretofore essentially digital switching devices, may thus be fabricated for use in circuits wherein variations in applied gate voltages can result in three or more stable current levels or transistors may be designed to provide various electrical output characteristics such as that required for analog circuits, fast EPROMs, high density ROMs, etc.
Claims3
A segmented channel field effect transistor including a substrate, separated source and drain pockets adjoining one surface of said substrate, a current conduction channel bridging the separation between said source and drain pockets and having a length corresponding to said separation and a width corresponding to the widths of said source and drain pockets adjacent said conduction channel, and a gate element overlying said channel and electrically insulated therefrom, the current conduction channel of said transistor having therein a plurality of segments each implanted to conduct at a unique threshold voltage, at least one of said plurality of segments bridging the width of said channel adjacent one of said pockets and narrowing in width as said segment extends along the length of said channel.
Dependencies are inferred from the claim text.