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AssigneeSiemens Aktiengesellschaft
InventorsSiegfried Birkle, Roland Rubner, Hans Hauschildt, Eva-Maria Rissel
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The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave-length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 .mu.m thick by means of UV rays in the wave-length range between about 180 to 260 nm.
In a method for the manufacture of resist structures on the basis of positive resists wherein a polymer material in the form of a layer or film is exposed with a predetermined pattern to short-wave UV rays and the exposed portions of the layer or film thereafter removed, the improvement wherein the polymer material comprises a copolymer of:
Dependencies are inferred from the claim text.