Method of manufacturing a semiconductor device having a layer of polymide resin
AssigneeFujitsu Limited
InventorsNobuhiro Uchiyama, Masataka Shingu, Saburo Tsukada
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Abstract
In order to selectively reduce the etching rate of the polyimide resin layer, ion implantation is carried out thereto. Preferably, the impurity ion such as As.sup.+, P.sup.+, B.sup.+, BF.sub.2.sup.+ is implanted with dosage of 1.times.10.sup.14 cm.sup.-2 or more. As a result, the polyimide resin layer has a resistivity to etching by the etchant containing hydrazine. This method can be used for preventing generation of unwanted etching in the process of forming the via hole in case of using the polyimide resin as the interlayer insulator for multiwiring structure.
Claims6
A method of manufacturing a semiconductor device comprising the steps of:
- forming on a substrate a polyimide resin layer,
- implanting an ion into a portion of said polyimide resin layer to substantially decrease the etching rate of said portion of said polyimide resin layer, are
- carrying out a selective etching of said polyimide resin layer so that the etching is sbustantially blocked by said portion of said polyimide resin layer.
A method of manufacturing a semiconductor device having a multilayer wiring structure comprising the steps of:
- forming on a substrate the first level wiring layer,
- forming the first polyimide resin layer on saId substrate to form an even surface, with at least a part of said first level wiring layer being exposed through said first polyimide layer,
- implanting an ion onto said first polyimide resin layer to substantially decrease its ething rate,
- forming the second polyimide resin layer on said implanted first polyimide resin layer and said first level wiring layer,
- selectively etching said second polyimide resin layer to form a via hole onto a part of said first level wiring layer, and
- forming on said second polyimide resin layer the second level wiring layer which is connected to said first level wiring layer through said via hole.
Dependencies are inferred from the claim text.