Back to results
US 4,392,299 AGranted
Method of manufacturing low resistance gates and interconnections
AssigneeRCA Corporation
InventorJoseph M. Shaw
Life of this patent
Estimating the term…
Abstract
A method of forming low resistance silicided gates or interconnects is described wherein a refractory metal and silicon is simultaneously co-deposited to form a composite layer which is thereafter heat treated in a non-oxidizing atmosphere to form the polycrystalline state of the silicide.
Claims4
A process for forming a low resistance refractory metal silicide on a substrate comprising the steps of:
- positioning the substrate in a reaction chamber maintained at a first temperature;
- depositing, in a single low pressure chemical vapor deposition step, a composite of a refractory metal and silicon on the substrate by simultaneously passing a gaseous mixture of both a refractory metal carbonyl and silane gas through the chamber and over the substrate;
- and
- heating the composite in a non-oxidizing atmosphere to a second temperature, higher than the first temperature, to form the silicide of the metal.
1 more element
Dependencies are inferred from the claim text.