Method of manufacturing a semiconductor device
AssigneeU.S. Philips Corporation
InventorsJozef A. M. Sanders, Franciscus H. M. Sanders
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device in which an organic lacquer layer which is locally present on a substrate is etched by bringing the layer into contact with constituents of plasma which is formed in a gas mixture which contains a halogen compound and an oxygen compound. If the mixture contains more than 25% by volume of an oxygen compound from the group CO.sub.2 and NO, the organic lacquer layer can be etched away from 500 to 1000 times faster than poly Si.
Claims4
In a method of manufacturing a semiconductor device having an organic lacquer layer locally present on a substrate comprising plasma etching said layer with a gas mixture containing a halogen compound and an oxygen compound representing more than 25% by volume of said gas mixture, the improvement comprising forming said oxygen compound from the group NO and CO.sub.2.
Dependencies are inferred from the claim text.