Plasma etching of polyimide
AssigneeRCA Corporation
InventorJoseph Zelez
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Abstract
An improvement in the formation of multilayer metallization systems wherein vias are formed in a dielectric insulating layer of polyimide which overlies a layer of metal such as aluminum. In accordance with the invention, the residual film remaining after oxygen plasma etching of the polyimide is efficiently removed by a second plasma etching utilizing a mixture of argon and hydrogen.
Claims7
In a method of forming a multilayer metallization system including the step of forming vias in a polyimide dielectric insulating layer overlying a layer of metal by oxygen plasma etching, the improvement comprising plasma etching with a mixture of argon and hydrogen after oxygen plasma etching.
Dependencies are inferred from the claim text.