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US 4,291,322 AGranted
Structure for shallow junction MOS circuits
AssigneeBell Telephone Laboratories, Incorporated
InventorsJames T. Clemens, Kay M. Locke
Life of this patent
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AssigneeBell Telephone Laboratories, Incorporated
InventorsJames T. Clemens, Kay M. Locke
Estimating the term…
A contact structure and method of fabrication for achieving shallow junction MOS integrated circuits. An insulator (23) such as phosphosilicate glass is deposited over the circuit and contact windows (24 and 25) opened therein. Fire polishing of the glass is eliminated so that the junctions can be made shallow and the sides of the windows remain steep. A layer of polycrystalline silicon (26) is deposited over the insulator and the contact windows so as to conformally coat the sides of the windows and the exposed semiconductor. A contact metal (28 and 29), such as aluminum, is deposited over the polycrystalline silicon. The metal tends to be essentially discontinuous over the steep sides of the windows, but the polycrystalline silicon layer has sufficiently low resistivity to provide adequate conduction in these areas.
An MOS integrated circuit including source and drain regions (20 and 21) of one conductivity type formed in one major surface of a semiconductor body (10) of opposite conductivity type so as to form p-n junctions therein and a structure for making electrical contact to portions of the circuit comprising an insulating layer (23) formed over the circuit and including windows (24 and 25) formed therein exposing the portions to be contacted, a layer (26) of polycrystalline silicon selectively formed over said insulating layer so as to form a continuous coating over the side walls of said windows, and a layer of metal (28 and 29) formed over said polycrystalline silicon layer CHARACTERIZED IN THAT the junction depths of the source and drain regions are 0.40 .mu.m or less, the side walls of the windows are steep with sharp edges, the layer of metal is essentially discontinuous at the side walls, and the polycrystalline silicon layer provides a low resistance to current conduction in the areas of the side walls.
An MOS integrated circuit including source and drain regions (20 and 21) of one conductivity type formed in one major surface of a semiconductor body (10) of opposite conductivity type so as to form p-n junctions therein and a structure for making electrical contact to portions of the circuit comprising an insulating layer (23) formed over the circuit and including windows (24 and 25) formed therein exposing the portions to be contacted, a layer (26) of polycrystalline silicon selectively formed over said insulating layer so as to form a continuous coating over the side walls of said windows, and a layer of metal (28 and 29) formed over said polycrystalline silicon layer CHARACTERIZED IN THAT the junction depths of the source and drain regions are 0.40 .mu.m or less, the side walls of the windows are essentially vertical with sharp edges, and the layer of metal is discontinuous at the side walls so that current conduction is provided by the polycrystalline silicon layer in the areas of the side walls.
An MOS integrated circuit including source and drain regions (20 and 21, respectively) of one conductivity type formed in one major surface of a semiconductor body of opposite conductivity type (10) so as to form p-n junctions therein and further including a structure for making electrical contact to portions of the circuit including said source and drain regions comprising a phosphosilicate glass layer (23) formed over the circuit and including windows (24 and 25) formed therein exposing the portions to be contacted, a layer (26) of polycrystalline silicon selectively formed over said insulating layer so as to form a continuous coating over the side walls of said windows and over the exposed portions, and a layer of metal (28 and 29) comprising aluminum formed over said polycrystalline layer CHARACTERIZED IN THAT the junction depths of the source and drain regions are 0.40 .mu.m or less, the side walls of the windows are essentially vertical with sharp edges, the layer of metal is discontinuous at the side walls, and the polycrystalline silicon layer is formed with a thickness of 0.10 .mu.m-1.0 .mu.m and a resistivity of 50.OMEGA. / or less so that current conduction is provided by the polycrystalline silicon layer in the areas of the side walls.
Dependencies are inferred from the claim text.