Apparatus for the treatment of semiconductors
AssigneeTokyo Shibaura Electric Co., Ltd.
InventorKazuo Niwa
Life of this patent
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Abstract
Apparatus for the treatment of semiconductors comprises a reaction chamber for effecting the vapor phase reaction of semiconductor substrates, means for introducing a vapor phase reaction gas into the reaction chamber, a plasma generating section, means for introducing into the plasma generating section a gas suitable for the plasma treatment of the inside of the reaction chamber, microwave power applying means for activating the gas contained in the plasma generating section, conduit means for introducing the activated gas into the reaction chamber, and evacuation means, whereby the undesired deposits formed on the parts other than the semiconductor substrates can be removed easily.
Claims8
Apparatus for the treatment of semiconductors comprising a reaction chamber for effecting the vapor phase reaction of semiconductor substrates, means for introducing a vapor phase reaction gas into said reaction chamber, a plasma generating section, means for introducing into said plasma generating section a gas suitable for the plasma treatment of the inside of said reaction chamber, power applying means for activating the gas contained in said plasma generating section, conduit means for introducing the activated gas into said reaction chamber, and evacuation means.
Dependencies are inferred from the claim text.