Method for stripping photolacquers
AssigneeMerck Patent GmbH
InventorsKarl Heinz Neisius, Wilhelm Baumer
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Abstract
Hardened photolacquer on semi-conductors and integrated circuits for etching purposes are stripped therefrom employing, preferably at a temperature above 75.degree. C., a stripping composition consisting essentially of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon, and 80-50 weight percent of a chlorine-free, aromatic hydrocarbon having a boiling point above 150.degree. C.
Claims6
In a method of stripping a hardened photolacquer etching mask from the surface of an etched electronic component substrate coated therewith by contacting the surface of the substrate with a stripping agent for the photolacquer which is free of metal ions, dust and high molecular weight and resinous impurities, the improvement wherein the stripping agent is a substantially impurity-free mixture of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon atoms and the remaining 80-50 weight percent of the mixture being a chlorine-free, aromatic hydrocarbon solvent having a boiling point above 150.degree. C.
Dependencies are inferred from the claim text.