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AssigneeU.S. Philips Corporation
InventorsUrsula Convertini, Heinz Dimigen, Holger Luthje
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In usual practice, cathodically etched structures typically show either non-etched parts (strong readsorption of sputtered material) or the etched structure shows strong grooves at the edges of the etching mask (strong back-diffusion of sputtered material). With a variation of the working gas pressure an adjustability of the average free path length of the atoms of the sputtered material and hence the adjustability of the quantity of material redeposited on the basis of back-diffusion is obtained. The working gas pressure can hence be adjusted so that the etching time to remove the readsorbed material and the material deposited again by back-diffusion is locally constant and equal etching rates are obtained for all areas of the structure to be etched.
A cathode sputtering method for the manufacture of etched structures in substrates covered with etching masks, in which the etching mask leaves exposed areas of different sizes on the substrate and in which said substrates are arranged on a cathode in a sputtering space and a gas discharge is initiated and maintained between the cathode and an anode, characterized in that the ratio of the distance d between anode and substrate to the average free path length .lambda. of the atoms of the sputtered material, that is d/.lambda., is at least 1, and is adjusted so that the etching rates in the small and large areas of the layer to be etched are substantially equally large.
Dependencies are inferred from the claim text.