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US 3,946,426 AGranted
Interconnect system for integrated circuits
AssigneeHarris Corporation
InventorThomas J. Sanders
Life of this patent
Estimating the term…
Abstract
An integrated circuit having a metal interconnect system formed with molybdenum engaging all contact areas of N conductivity type regions and aluminum engaging said molybdenum and engaging all contact areas of P conductivity type regions.
Claims7
A semiconductor device comprising:
- a silicon wafer having P and N conductivity type regions therein and having one face coated with a silicon oxide;
- a first layer of molybdenum engaging a surface of selective N conductivity type regions in an opening in said oxide coating, thereby forming an ohmic contact;
- a first layer of aluminum engaging a surface of selective P conductivity type regions in an opening in said oxide, thereby forming an ohmic contact, the metal engaging said selected N regions being only molybdenum and the metal engaging said selected P regions being only aluminum;
- and
- a plurality of interconnections, each including a second layer of molybdenum engaging said silicon oxide layer and a second layer of aluminum superimposed on said second molybdenum layer, said second layer of aluminum engages a respective contact formed by said first molybdenum or aluminum layer.
2 more elements
A metal interconnect system for integrated circuits having a silicon wafer coated on one face with a silicon oxide comprising:
- a first layer of molybdenum engaging all contact areas of only N conductivity type regions through openings in said oxide coating to form ohmic contacts;
- a first layer of aluminum engaging all contact areas of only P conductivity type regions through openings in said oxide coating to form ohmic contacts;
- and
- interconnections between said first layers of metals engaging said contact areas including a second layer of molybdenum layer engaging said oxide coating and a second layer of aluminum superimposed on said second molybdenum layer, said second aluminum layer engages selected first layer metals that are to be interconnected.
1 more element
A semiconductor device comprising:
- a silicon wafer having shallow P and N conductivity type diffused regions;
- a layer of aluminum located over said wafer and engaging all contact areas of regions of only said P conductivity type, thereby forming ohmic contacts with said P type regions;
- a layer of molybdenum between said layer of aluminum and contact areas of regions of only N conductivity type, thereby forming ohmic contacts with said N type regions and between said layer of aluminum and said silicon wafer, thereby forming interconnects;
- and
- a layer of insulation between said layer of molybdenum which forms said interconnects and said silicon wafer, said interconnects connect selected ohmic contacts by said layer of aluminum.
2 more elements
Dependencies are inferred from the claim text.