Semiconductor diode with layers of different but related resistivities
OwnerSergei Fedorovich Kausovinventor
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Abstract
The semiconductor junction of a diode is made up of p- and n-type layers, said layers having substantially different resistivities. The thickness of the layer with a greater resistivity does not exceed that of the space charge when a reverse bias voltage, which is less than the puncture voltage of the semiconductor junction, is applied to the structure. The minimum distance between the edge of the ohmic contact adjoining the layer with a greater resistivity and the place of emergence of the semiconductor junction to the surface of the structure is no less than the double thickness of the layer with a greater resistivity.
Claims6
A semiconductor diode comprising two layers of opposite types of conductivity constituting a semiconductor structure, said layers forming a semiconductor junction therebetween and having substantially different resistivity, the layer with greater resistivity having a thickness no greater than that of the space charge produced as a result of application to said structure of a reverse bias voltage which is less than the puncture voltage of said semiconductor junction, ohmic contacts respectively adjoining said layers and adapted to apply supply voltage to said structure, said ohmic contacts having respective edges, said semiconductor junction emerging at the surface of said structure, the ohmic contact adjacent the layer with greater resistivity being arranged so that the distance between its edge and the place of emergence of the semiconductor junction at the surface of the structure is no less than two times the thickness of the layer with a greater resistivity.
A semiconductor P-N type junction construction comprising:
- two semiconductor layers of opposite types of conductivity, ohmic contacts on said layers, said layers forming a P-N junction and having different resistivity values, the thickness of the layer with a greater resistivity not exceeding that of the region of the space charge produced as a result of application to said construction of a reverse bias voltage which is lower than the puncture voltage of said P-N junction;
- the ohmic contact attached to the layer having a greater resistivity and having an area smaller than that of the P-N junction;
- the latter said ohmic contact being so disposed that the distance from its edges to the place where the P-N junction emerges on the surface of the semiconductor construction is at least twice as large as the thickness of the layer with a greater resistivity.
Dependencies are inferred from the claim text.