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US 2026/0305290 A1Published application
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorEiji HIRAIWA
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Abstract
A semiconductor device includes a first interlayer insulating film, a lower electrode formed on the first interlayer insulating film, a dielectric film formed on the lower electrode, an upper electrode formed on the dielectric film, and at least one conductive layer formed in the first interlayer insulating film so as to contact the lower electrode.
Claims19
A semiconductor device comprising:
- a first interlayer insulating film;
- a lower electrode formed on the first interlayer insulating film;
- a dielectric film formed on the lower electrode;
- an upper electrode formed on the dielectric film;
- and
- at least one conductive layer formed in the first interlayer insulating film so as to contact the lower electrode.
3 more elements
Dependencies are inferred from the claim text.