US 2026/0231387 A1Published application

Semiconductor device

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorJHON JHY LIAW

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Abstract

A semiconductor device is provided. In a first memory cell, a first pass-gate transistor has a first gate structure electrically connected to a first word line and a source/drain feature electrically connected to a first bit line, and a first pull-up transistor has a source electrically connected to a first VDD line. In a second memory cell, a second pass-gate transistor has a second gate structure electrically connected to a second word line and a source/drain feature electrically connected to a second bit line, and a second pull-up transistor has a source electrically connected to a second VDD line. The first and second VDD lines and the first bit line are disposed in a first metal layer closest to the first and second gate structures, and the first word line and the second bit line are disposed in a second metal layer over the first metal layer.

Claims20

Dependent claims

A semiconductor device, comprising:

a first memory cell, comprising:
a first pass-gate transistor, having a first gate structure electrically connected to a first word line extending parallel to the first gate structure, and a first source/drain feature electrically connected to a first bit line extending perpendicular to the first gate structure;
and
a first pull-up transistor, having a first source electrically connected to a first VDD line extending perpendicular to the first gate structure;
and
a second memory cell, comprising:
a second pass-gate transistor, having a second gate structure electrically connected to a second word line extending parallel to the second gate structure, and a second source/drain feature electrically connected to a second bit line extending perpendicular to the second gate structure;
and
a second pull-up transistor, having a second source electrically connected to a second VDD line extending perpendicular to the second gate structure,
wherein the first VDD line, the first bit line and the second VDD line are disposed in a first metal layer closest to the first and second gate structures, and the first word line and the second bit line are disposed in a second metal layer over the first metal layer.

7 more elements

Dependencies are inferred from the claim text.