Pvd target structure and method for preparing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHIA-HSI WANG, YEN-YU CHEN
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHIA-HSI WANG, YEN-YU CHEN
Estimating the term…
A physical vapor deposition (PVD) target structure is provided. The PVD target structure includes a planar target body having a first side and a second side opposite to the first side, with a sidewall intersecting the first side and the second side. The first side of the planar target body includes a knurled region in proximity to an edge of the first side. The knurled region includes a plurality of concave structures and a plurality of convex structures arranged alternately. The concave structure has a shape of an inverted frustum of a pyramid. The convex structure has a shape of a frustum of a pyramid. A method for preparing PVD target structure and a method for performing a PVD process are also provided.
A physical vapor deposition (PVD) target structure, comprising:
A method for preparing physical vapor deposition (PVD) target structure, the method comprising:
A method for performing a physical vapor deposition process, the method comprising:
Dependencies are inferred from the claim text.