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AssigneeSumitomo Chemical Company, Limited
InventorsTetsuji FUJIMOTO, Nobuyuki YOSHIDA, Takayuki SUZUKI, Masatomo SHIBATA
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Provided is a technique of producing a gallium nitride single-crystal substrate in which a stress at an edge is reduced, the gallium nitride single-crystal substrate including a single crystal of gallium nitride, the substrate being a circular substrate having concentric striations observed as bright and dark stripes when a principal surface of the substrate is observed with a fluorescence microscope, in which a substrate center, which is a center of the circular substrate, is located at a position displaced from a striation center, which is a center of the concentric striations.
A gallium nitride single-crystal substrate comprising a single crystal of gallium nitride, the substrate being a circular substrate having concentric striations observed as bright and dark stripes when a principal surface of the substrate is observed with a fluorescence microscope, wherein
A method of producing a gallium nitride single-crystal substrate, the method comprising:
Dependencies are inferred from the claim text.