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US 2026/0107714 A1Published application
Selective Etching of Silicon Dioxide and Silicon Nitride Containing Materials
OwnerSteven George, Marcel Junigeinventors
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Abstract
Provided herein are methods for selectively etching substrates containing silicon dioxide and silicon nitride. The methods enable selective etching of silicon dioxide or silicon nitride in the presence of both materials.
Claims28
A method of etching a substrate, the method comprising:
- contacting, in a reaction chamber, the substrate with an etching reagent comprising hydrogen fluoride (HF) and optionally a polar molecule having a dipole moment of at least 1 Debye;
- and
- etching the substrate,
- wherein the substrate comprises silicon dioxide (SiO2) and silicon nitride (SiNx).
1 more element
Dependencies are inferred from the claim text.