Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsHitoshi KATO, Hiroyuki KIKUCHI, Hidenobu SATO, Ibuki HAYASHI
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Abstract
A substrate processing method according to an aspect of the present disclosure includes: preparing a substrate having a silicon film on a surface thereof; and supplying chlorine gas to the substrate, thereby etching the silicon film. The etching of the silicon film includes: retaining, in a retaining portion, the chlorine gas before being supplied to the substrate, and generating chlorine radicals from the chlorine gas by irradiating, with an ultraviolet ray, the chlorine gas inside the retaining portion.
Claims11
A substrate processing method, comprising:
- preparing a substrate having a silicon film on a surface thereof;
- and
- supplying chlorine gas to the substrate, thereby etching the silicon film, wherein
- the etching of the silicon film includes:
- retaining, in a retaining portion, the chlorine gas before being supplied to the substrate, and
- generating chlorine radicals from the chlorine gas by irradiating, with an ultraviolet ray, the chlorine gas inside the retaining portion.
A substrate processing apparatus, comprising:
- a vacuum chamber configured to accommodate a substrate;
- a chlorine gas supply configured to supply chlorine gas to the substrate in the vacuum chamber;
- and
- a controller, wherein
- the chlorine gas supply includes:
- a retaining portion configured to retain the chlorine gas before being supplied to the substrate in the vacuum chamber, and
- a light source configured to emit an ultraviolet ray to irradiate the chlorine gas inside the retaining portion,
- the controller is configured to execute:
- preparation of the substrate having a silicon film on a surface thereof, and
- supply of the chlorine gas to the substrate, thereby etching the silicon film, and
- the etching of the silicon film includes:
- retaining, in the retaining portion, the chlorine gas before being supplied to the substrate, and
- generating chlorine radicals from the chlorine gas by irradiating, with the ultraviolet ray, the chlorine gas inside the retaining portion.
Dependencies are inferred from the claim text.