Methods of depositing iridium-containing films for microelectronic devices

A method of manufacturing an interconnect structure, the method comprising:

• forming a dielectric layer on a substrate, the dielectric layer including at least one feature defining a gap having sidewalls comprising a dielectric material and a bottom comprising a metallic material;
• selectively depositing a barrier layer on the dielectric material;
• depositing a metal liner on the barrier layer;
• filling the gap with a gapfill material comprising one or more of copper (Cu), manganese (Mn), tungsten (W), ruthenium (Ru), or molybdenum (Mo);
• and
• selectively depositing an iridium-containing film on the gapfill material relative to the dielectric material.