Selective deposition method of thin film and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming a transistor channel on a substrate;
• forming a gate dielectric layer on the transistor channel;
• and
• forming a gate electrode on the gate dielectric layer,
• wherein the transistor channel comprises a first transistor channel and a second transistor channel which are stacked in a vertical direction with respect to a surface of the substrate,
• the gate electrode comprises a first gate electrode and a second gate electrode which are stacked in the vertical direction with respect to the surface of the substrate and comprise different conductors,
• the first gate electrode overlaps the first transistor channel in the vertical direction, and the second gate electrode overlaps the second transistor channel in the vertical direction, and
• the forming of the gate electrode comprises
• forming a conductor for the first gate electrode on the gate dielectric layer,
• forming a hardmask layer on the conductor for the first gate electrode,
• removing a portion of the hardmask layer to expose a portion of the conductor for the first gate electrode,
• removing an exposed portion of the conductor for the first gate electrode and exposing a portion of the gate dielectric layer,
• supplying a reaction inhibitor onto an exposed portion of the gate dielectric layer and the hardmask layer to adsorb the reaction inhibitor onto the exposed portion of the gate dielectric layer and the hardmask layer,
• supplying a reaction auxiliary agent, which reacts with the reaction inhibitor, to selectively remove the reaction inhibitor adsorbed on the exposed portion of the gate dielectric layer,
• supplying a reaction precursor for a second gate electrode to adsorb the reaction precursor for the second gate electrode on a portion of the gate dielectric layer from which the reaction inhibitor is removed,
• supplying a reactant for the second gate electrode, which reacts with the reactant precursor for the second gate electrode, to selectively form the second gate electrode on the gate dielectric layer, and
• removing the hardmask layer.