US 2026/0101592 A1 · SEMICONDUCTOR DEVICE

Abstract

Semiconductor devices are provided. The semiconductor device includes a substrate, a source region in the substrate, a drain region in the substrate and having a drain sidewall facing toward the source region, a gate structure on the substrate and between the drain region and the source region, and a first well in the substrate and underneath the drain region. The gate structure has a first gate sidewall facing toward the drain region. The first well has a well sidewall facing toward the source region. A first distance between the first gate sidewall and the drain sidewall is less than or equal to a second distance between the first gate sidewall and the well sidewall.

Claims20

Dependent claims

A semiconductor device, comprising:

a substrate;
a source region in the substrate;
a drain region in the substrate and having a drain sidewall facing toward the source region;
a gate structure on the substrate and between the drain region and the source region, wherein the gate structure has a first gate sidewall facing toward the drain region;
and
a first well in the substrate and underneath the drain region, wherein the first well has a well sidewall facing toward the source region,
wherein a first distance between the first gate sidewall and the drain sidewall is less than or equal to a second distance between the first gate sidewall and the well sidewall.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20