Electrostatic discharge protection circuit
AssigneeVanguard International Semiconductor Corporation
InventorsLi-Yang HONG, Jian-Hsing LEE, Yeh-Jen HUANG, Yeh-Ning JOU
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AssigneeVanguard International Semiconductor Corporation
InventorsLi-Yang HONG, Jian-Hsing LEE, Yeh-Jen HUANG, Yeh-Ning JOU
Estimating the term…
An electrostatic discharge protection circuit for protecting a core circuit is provided. The electrostatic discharge protection circuit includes a first high electron mobility transistor, a second high electron mobility transistor, a first resistor and a third high electron mobility transistor. The first high electron mobility transistor is coupled to a first input terminal. The second high electron mobility transistor is coupled between the first high electron mobility transistor and a second input terminal. The first resistor is coupled between the first input terminal and the core circuit. The third high electron mobility transistor is connected in parallel with the first resistor. A third gate of the third high electron mobility transistor is coupled to a first electrode of the third high electron mobility transistor.
An electrostatic discharge protection circuit for protecting a core circuit, comprising:
Dependencies are inferred from the claim text.